K2611 TRANSISTOR TOSHIBA 2SK2611 900V N CH MOSFET TO 3P

Sepcifications

Absolute Maximum Ratings

1. Drain−source voltage : VDSS = 900 V

2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 900 V

3. Gate−source voltage : VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C) : PD = 150 W

5. Single pulse avalanche energy : EAS = 663 mJ

6. Avalanche current : IAR = 9 A

7. Repetitive avalanche energy : EAR = 15 mJ